SLF70R900S2 Datasheet. Specs and Replacement
Type Designator: SLF70R900S2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26.3 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220F
SLF70R900S2 substitution
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SLF70R900S2 datasheet
sld70r900s2 slf70r900s2.pdf
SLD70R900S2 / SLF70R900S2 700V N-Channel Power MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 700V, RDS(on) typ. = 0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Extended Safe Operating Area This advanced technology has been especially tailored to - Ease of Paralleling minimize on-state resistance, provide superior switching - Fas... See More ⇒
slf70r380e7c.pdf
SLF70R380E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 700V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch... See More ⇒
slp70r600s2 slf70r600s2.pdf
SLP70R600S2/SLF70R600S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 700V, RDS(on)typ= 0.52 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 18nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per... See More ⇒
slp70r420s2 slf70r420s2.pdf
SLP70R420S2/SLF70R420S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 700V, RDS(on)typ= 0.37 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 24nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switc... See More ⇒
Detailed specifications: SLD65R700S2, SLU65R700S2, SLD65R950S2, SLD70R420S2, SLU70R420S2, SLD70R600S2, SLU70R600S2, SLD70R900S2, 4N60, SLD740UZ, SLD80R380SJ, SLU80R380SJ, SLP80R380SJ, SLF80R380SJ, SLB80R380SJ, SLI80R380SJ, SLD80R500SJ
Keywords - SLF70R900S2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IXFV30N60P | NTMFS4925NE
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