SLF70R900S2 datasheet, аналоги, основные параметры

Наименование производителя: SLF70R900S2  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 24 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 26.3 ns

Cossⓘ - Выходная емкость: 21 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: TO220F

  📄📄 Копировать 

Аналог (замена) для SLF70R900S2

- подборⓘ MOSFET транзистора по параметрам

 

SLF70R900S2 даташит

 ..1. Size:710K  maple semi
 sld70r900s2 slf70r900s2.pdf pdf_icon

SLF70R900S2

SLD70R900S2 / SLF70R900S2 700V N-Channel Power MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 700V, RDS(on) typ. = 0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Extended Safe Operating Area This advanced technology has been especially tailored to - Ease of Paralleling minimize on-state resistance, provide superior switching - Fas

 8.1. Size:2508K  maple semi
 slf70r380e7c.pdf pdf_icon

SLF70R900S2

SLF70R380E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 700V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

 8.2. Size:495K  maple semi
 slp70r600s2 slf70r600s2.pdf pdf_icon

SLF70R900S2

SLP70R600S2/SLF70R600S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 700V, RDS(on)typ= 0.52 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 18nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

 8.3. Size:737K  maple semi
 slp70r420s2 slf70r420s2.pdf pdf_icon

SLF70R900S2

SLP70R420S2/SLF70R420S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 700V, RDS(on)typ= 0.37 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 24nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switc

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SLD65R700S2, SLU65R700S2, SLD65R950S2, SLD70R420S2, SLU70R420S2, SLD70R600S2, SLU70R600S2, SLD70R900S2, 4N60, SLD740UZ, SLD80R380SJ, SLU80R380SJ, SLP80R380SJ, SLF80R380SJ, SLB80R380SJ, SLI80R380SJ, SLD80R500SJ