SLP3101 Datasheet. Specs and Replacement
Type Designator: SLP3101 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 430 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO220
SLP3101 substitution
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SLP3101 datasheet
slf3101 slp3101.pdf
LEAD FREE Pb RoHS SLF3101/SLP3101 430V N-Channel MOSFET General Description Features - 11A, 430V, RDS(on)typ. = 0.55 @VGS = 10 V - Low gate charge ( typical 23nC) This Power MOSFET is produced using Maple semi s - High ruggedness advanced trench MOSFET technology. - Fast switching This advanced technology has been especially tailored - 100% avalanche tested to minimize... See More ⇒
Detailed specifications: SLI80R500SJ, SLD80R850SJ, SLU80R850SJ, SLP80R850SJ, SLF80R850SJ, SLB80R850SJ, SLI80R850SJ, SLF3101, STP65NF06, SLF50R140SJ, SLP50R140SJ, SLF60R080SS, SLF60R160S2, SLF60R650S2, SLF65R300S2, SLF65R700S2, SLF65R950S2
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
