All MOSFET. SLP3101 Datasheet

 

SLP3101 Datasheet and Replacement


   Type Designator: SLP3101
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 430 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220
 

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SLP3101 Datasheet (PDF)

 ..1. Size:567K  maple semi
 slf3101 slp3101.pdf pdf_icon

SLP3101

LEAD FREEPbRoHS SLF3101/SLP3101430V N-Channel MOSFETGeneral Description Features - 11A, 430V, RDS(on)typ. = 0.55@VGS = 10 V - Low gate charge ( typical 23nC)This Power MOSFET is produced using Maple semis - High ruggednessadvanced trench MOSFET technology. - Fast switchingThis advanced technology has been especially tailored - 100% avalanche testedto minimize

Datasheet: SLI80R500SJ , SLD80R850SJ , SLU80R850SJ , SLP80R850SJ , SLF80R850SJ , SLB80R850SJ , SLI80R850SJ , SLF3101 , IRFZ48N , SLF50R140SJ , SLP50R140SJ , SLF60R080SS , SLF60R160S2 , SLF60R650S2 , SLF65R300S2 , SLF65R700S2 , SLF65R950S2 .

History: TPW65R080C | SLF80R380SJ | S10H12R | AP9997GK-HF | BSC22DN20NS3G | HGP100N12SL | NTMD6P02R2

Keywords - SLP3101 MOSFET datasheet

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