SLF60R080SS Datasheet. Specs and Replacement

Type Designator: SLF60R080SS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 2399 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO220F

SLF60R080SS substitution

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SLF60R080SS datasheet

 ..1. Size:515K  maple semi
slf60r080ss.pdf pdf_icon

SLF60R080SS

SLF60R080SS 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s Features - 47A, 600V, RDS(on) typ.= 68m @VGS =10 V Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( t... See More ⇒

 8.1. Size:960K  maple semi
slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R080SS

SLP60R190S2/SLF60R190S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 600V, RDS(on)typ= 0.16 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 39nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe... See More ⇒

 8.2. Size:716K  maple semi
slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R080SS

SLP60R850S2/SLF60R850S2 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 600V, RDS(on) = 850m @VGS = 10 V advanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, ... See More ⇒

 8.3. Size:1025K  maple semi
slf60r650s2.pdf pdf_icon

SLF60R080SS

SLF60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, an... See More ⇒

Detailed specifications: SLP80R850SJ, SLF80R850SJ, SLB80R850SJ, SLI80R850SJ, SLF3101, SLP3101, SLF50R140SJ, SLP50R140SJ, IRFZ48N, SLF60R160S2, SLF60R650S2, SLF65R300S2, SLF65R700S2, SLF65R950S2, SLH60R080SS, SLP10N60C, SLF10N60C

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