SLF60R080SS datasheet, аналоги, основные параметры

Наименование производителя: SLF60R080SS  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 120 ns

Cossⓘ - Выходная емкость: 2399 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm

Тип корпуса: TO220F

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Аналог (замена) для SLF60R080SS

- подборⓘ MOSFET транзистора по параметрам

 

SLF60R080SS даташит

 ..1. Size:515K  maple semi
 slf60r080ss.pdf pdf_icon

SLF60R080SS

SLF60R080SS 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s Features - 47A, 600V, RDS(on) typ.= 68m @VGS =10 V Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( t

 8.1. Size:960K  maple semi
 slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R080SS

SLP60R190S2/SLF60R190S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 600V, RDS(on)typ= 0.16 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 39nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe

 8.2. Size:716K  maple semi
 slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R080SS

SLP60R850S2/SLF60R850S2 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 600V, RDS(on) = 850m @VGS = 10 V advanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance,

 8.3. Size:1025K  maple semi
 slf60r650s2.pdf pdf_icon

SLF60R080SS

SLF60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, an

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