Справочник MOSFET. SLF60R080SS

 

SLF60R080SS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SLF60R080SS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 2399 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SLF60R080SS

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLF60R080SS Datasheet (PDF)

 ..1. Size:515K  maple semi
 slf60r080ss.pdf pdf_icon

SLF60R080SS

SLF60R080SS 600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis Features - 47A, 600V, RDS(on) typ.= 68m@VGS =10 V Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( t

 8.1. Size:960K  maple semi
 slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R080SS

SLP60R190S2/SLF60R190S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 20A, 600V, RDS(on)typ= 0.16@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 39nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

 8.2. Size:716K  maple semi
 slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R080SS

SLP60R850S2/SLF60R850S2600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 600V, RDS(on) = 850m@VGS = 10 Vadvanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance,

 8.3. Size:1025K  maple semi
 slf60r650s2.pdf pdf_icon

SLF60R080SS

SLF60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an

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Другие MOSFET... SLP80R850SJ , SLF80R850SJ , SLB80R850SJ , SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , SLP50R140SJ , RU7088R , SLF60R160S2 , SLF60R650S2 , SLF65R300S2 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C .

History: PN4118 | HGI090NE6A | SQ2337ES | AON7518 | 2SK346 | MTP2N90 | AP6901GSM-HF

 

 
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