All MOSFET. SLH60R080SS Datasheet

 

SLH60R080SS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLH60R080SS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 290 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 47 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 88 nC
   Rise Time (tr): 120 nS
   Drain-Source Capacitance (Cd): 2399 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm
   Package: TO247

 SLH60R080SS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLH60R080SS Datasheet (PDF)

 ..1. Size:511K  maple semi
 slh60r080ss.pdf

SLH60R080SS SLH60R080SS

SLH60R080SS 600V N-Channel MOSFET FeaturesGeneral Description Features - 47A, 600V, RDS(on) typ.= 68m@VGS =10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( typic

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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