All MOSFET. SLP10N60C Datasheet

 

SLP10N60C Datasheet and Replacement


   Type Designator: SLP10N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 186 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36.5 nC
   tr ⓘ - Rise Time: 24.5 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.745 Ohm
   Package: TO220
 

 SLP10N60C substitution

   - MOSFET ⓘ Cross-Reference Search

 

SLP10N60C Datasheet (PDF)

 ..1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLP10N60C

SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 7.1. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLP10N60C

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 7.2. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLP10N60C

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

 7.3. Size:978K  maple semi
 slp10n65a slf10n65a.pdf pdf_icon

SLP10N60C

LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTA10N60P

Keywords - SLP10N60C MOSFET datasheet

 SLP10N60C cross reference
 SLP10N60C equivalent finder
 SLP10N60C lookup
 SLP10N60C substitution
 SLP10N60C replacement

 

 
Back to Top

 


 
.