SLP10N60C datasheet, аналоги, основные параметры

Наименование производителя: SLP10N60C  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 186 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 4 V

Qg ⓘ - Общий заряд затвора: 36.5 nC

tr ⓘ - Время нарастания: 24.5 ns

Cossⓘ - Выходная емкость: 119 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.745 Ohm

Тип корпуса: TO220

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Аналог (замена) для SLP10N60C

- подборⓘ MOSFET транзистора по параметрам

 

SLP10N60C даташит

 ..1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLP10N60C

SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 600V, RDS(on)typ. = 0.62 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi

 7.1. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLP10N60C

SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi

 7.2. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLP10N60C

LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi

 7.3. Size:978K  maple semi
 slp10n65a slf10n65a.pdf pdf_icon

SLP10N60C

LEAD FREE Pb RoHS SLP10N65A/SLF10N65A 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on)Typ = 0.745 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 19nC) This advanced technology has been especially tailored - Low Crss ( typical 5.3pF) to minimize on-state resistance, provide superi

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Другие IGBT... SLP50R140SJ, SLF60R080SS, SLF60R160S2, SLF60R650S2, SLF65R300S2, SLF65R700S2, SLF65R950S2, SLH60R080SS, K2611, SLF10N60C, SLP10N65A, SLF10N65A, SLP10N65C, SLF10N65C, SLP10N65S, SLF10N65S, SLP12N60C