SLP10N60C - Даташиты. Аналоги. Основные параметры
Наименование производителя: SLP10N60C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 186 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 24.5 ns
Cossⓘ - Выходная емкость: 119 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.745 Ohm
Тип корпуса: TO220
Аналог (замена) для SLP10N60C
SLP10N60C Datasheet (PDF)
slp10n60c slf10n60c.pdf

SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi
slp10n65c slf10n65c.pdf

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi
slp10n65s slf10n65s.pdf

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi
slp10n65a slf10n65a.pdf

LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi
Другие MOSFET... SLP50R140SJ , SLF60R080SS , SLF60R160S2 , SLF60R650S2 , SLF65R300S2 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , IRF9640 , SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C , SLF10N65C , SLP10N65S , SLF10N65S , SLP12N60C .
History: 2N7092 | TSM4N60CH | 2SK2765-01
History: 2N7092 | TSM4N60CH | 2SK2765-01



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
3sk41 | 2sc2240 transistor | c3198 | 2sc793 | 2sd313 replacement | 2n4249 | a1013 transistor | 2sc2705