SLP10N60C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SLP10N60C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 186 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 36.5 nC
Время нарастания (tr): 24.5 ns
Выходная емкость (Cd): 119 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.745 Ohm
Тип корпуса: TO220
SLP10N60C Datasheet (PDF)
slp10n60c slf10n60c.pdf
SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi
slp10n65c slf10n65c.pdf
SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi
slp10n65s slf10n65s.pdf
LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi
slp10n65a slf10n65a.pdf
LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
