SLP10N65C Datasheet. Specs and Replacement
Type Designator: SLP10N65C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 203 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 38 nC
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 172 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.81 Ohm
Package: TO220
SLP10N65C substitution
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SLP10N65C datasheet
slp10n65c slf10n65c.pdf
SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒
slp10n65s slf10n65s.pdf
LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi... See More ⇒
slp10n65a slf10n65a.pdf
LEAD FREE Pb RoHS SLP10N65A/SLF10N65A 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on)Typ = 0.745 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 19nC) This advanced technology has been especially tailored - Low Crss ( typical 5.3pF) to minimize on-state resistance, provide superi... See More ⇒
slp10n60c slf10n60c.pdf
SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 600V, RDS(on)typ. = 0.62 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒
Detailed specifications: SLF65R300S2, SLF65R700S2, SLF65R950S2, SLH60R080SS, SLP10N60C, SLF10N60C, SLP10N65A, SLF10N65A, AOD4184A, SLF10N65C, SLP10N65S, SLF10N65S, SLP12N60C, SLF12N60C, SLP12N65C, SLF12N65C, SLP13N50A
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