Справочник MOSFET. SLP10N65C

 

SLP10N65C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SLP10N65C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 203 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 172 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.81 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SLP10N65C

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLP10N65C Datasheet (PDF)

 ..1. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLP10N65C

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 6.1. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLP10N65C

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

 6.2. Size:978K  maple semi
 slp10n65a slf10n65a.pdf pdf_icon

SLP10N65C

LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi

 7.1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLP10N65C

SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLF65R300S2 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A , HY1906P , SLF10N65C , SLP10N65S , SLF10N65S , SLP12N60C , SLF12N60C , SLP12N65C , SLF12N65C , SLP13N50A .

History: BUK9K20-80E | KTK7132E | BRB10N65 | FDZ7296 | HGP024N08S | HAF1002S | FDS6673AZ

 

 
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