SLF12N60C Datasheet and Replacement
Type Designator: SLF12N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30.5 nS
Cossⓘ - Output Capacitance: 206 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.61 Ohm
Package: TO220F
SLF12N60C substitution
SLF12N60C Datasheet (PDF)
slp12n60c slf12n60c.pdf

SLP12N60C / SLF12N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 12.0A, 600V, RDS(on)typ = 0.51@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44.7nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switch
slf12n65sv.pdf

SLF12N65SV650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 12A*, 650V, RDS(on),typ =0.67planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 33nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-
slp12n65c slf12n65c.pdf

SLP12N65C / SLF12N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 12A, 650V, RDS(on) typ. = 0.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 47nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
Datasheet: SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C , SLF10N65C , SLP10N65S , SLF10N65S , SLP12N60C , IRFP064N , SLP12N65C , SLF12N65C , SLP13N50A , SLF13N50A , SLP13N50C , SLF13N50C , SLP16N50C , SLF16N50C .
Keywords - SLF12N60C MOSFET datasheet
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