SLP12N65C Datasheet. Specs and Replacement

Type Designator: SLP12N65C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 259 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.5 nS

Cossⓘ - Output Capacitance: 196 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm

Package: TO220

SLP12N65C substitution

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SLP12N65C datasheet

 ..1. Size:1813K  maple semi
slp12n65c slf12n65c.pdf pdf_icon

SLP12N65C

SLP12N65C / SLF12N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 12A, 650V, RDS(on) typ. = 0.6 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 47nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒

 7.1. Size:1352K  maple semi
slp12n60c slf12n60c.pdf pdf_icon

SLP12N65C

SLP12N60C / SLF12N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 12.0A, 600V, RDS(on)typ = 0.51 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 44.7nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switch... See More ⇒

Detailed specifications: SLP10N65A, SLF10N65A, SLP10N65C, SLF10N65C, SLP10N65S, SLF10N65S, SLP12N60C, SLF12N60C, IRFZ44N, SLF12N65C, SLP13N50A, SLF13N50A, SLP13N50C, SLF13N50C, SLP16N50C, SLF16N50C, SLP16N50S

Keywords - SLP12N65C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.