All MOSFET. SLF12N65C Datasheet

 

SLF12N65C MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLF12N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 26.5 nS
   Cossⓘ - Output Capacitance: 196 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO220F

 SLF12N65C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLF12N65C Datasheet (PDF)

 ..1. Size:1813K  maple semi
 slp12n65c slf12n65c.pdf

SLF12N65C SLF12N65C

SLP12N65C / SLF12N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 12A, 650V, RDS(on) typ. = 0.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 47nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 7.1. Size:1352K  maple semi
 slp12n60c slf12n60c.pdf

SLF12N65C SLF12N65C

SLP12N60C / SLF12N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 12.0A, 600V, RDS(on)typ = 0.51@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44.7nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SLF10N70C

 

 
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