All MOSFET. SLP13N50A Datasheet

 

SLP13N50A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLP13N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.1 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220

 SLP13N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLP13N50A Datasheet (PDF)

 ..1. Size:1086K  maple semi
 slp13n50a slf13n50a.pdf

SLP13N50A SLP13N50A

LEAD FREEPbRoHSSLP13N50A / SLF13N50A500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Maple semis advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483@VGS = 10 VThis advanced technology has been especially tailored - Low gate charge ( typical 19.1nC)to minimize on-state resistance, provide superior switching - Low Crss (

 6.1. Size:1319K  maple semi
 slp13n50c slf13n50c.pdf

SLP13N50A SLP13N50A

SLP13N50C / SLF13N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 13A, 500V, RDS(on)typ. = 386m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: PV501BA

 

 
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