SLP13N50A Datasheet. Specs and Replacement

Type Designator: SLP13N50A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 153 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220

SLP13N50A substitution

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SLP13N50A datasheet

 ..1. Size:1086K  maple semi
 slp13n50a slf13n50a.pdf pdf_icon

SLP13N50A

LEAD FREE Pb RoHS SLP13N50A / SLF13N50A 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483 @VGS = 10 V This advanced technology has been especially tailored - Low gate charge ( typical 19.1nC) to minimize on-state resistance, provide superior switching - Low Crss (... See More ⇒

 6.1. Size:1319K  maple semi
 slp13n50c slf13n50c.pdf pdf_icon

SLP13N50A

SLP13N50C / SLF13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 13A, 500V, RDS(on)typ. = 386m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 44nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒

Detailed specifications: SLP10N65C, SLF10N65C, SLP10N65S, SLF10N65S, SLP12N60C, SLF12N60C, SLP12N65C, SLF12N65C, IRF740, SLF13N50A, SLP13N50C, SLF13N50C, SLP16N50C, SLF16N50C, SLP16N50S, SLF16N50S, SLP18N50C

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