All MOSFET. SLF13N50A Datasheet

 

SLF13N50A Datasheet and Replacement


   Type Designator: SLF13N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

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SLF13N50A Datasheet (PDF)

 ..1. Size:1086K  maple semi
 slp13n50a slf13n50a.pdf pdf_icon

SLF13N50A

LEAD FREEPbRoHSSLP13N50A / SLF13N50A500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Maple semis advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483@VGS = 10 VThis advanced technology has been especially tailored - Low gate charge ( typical 19.1nC)to minimize on-state resistance, provide superior switching - Low Crss (

 6.1. Size:1319K  maple semi
 slp13n50c slf13n50c.pdf pdf_icon

SLF13N50A

SLP13N50C / SLF13N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 13A, 500V, RDS(on)typ. = 386m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

Datasheet: SLF10N65C , SLP10N65S , SLF10N65S , SLP12N60C , SLF12N60C , SLP12N65C , SLF12N65C , SLP13N50A , IRF840 , SLP13N50C , SLF13N50C , SLP16N50C , SLF16N50C , SLP16N50S , SLF16N50S , SLP18N50C , SLF18N50C .

History: PE532DY | OSG60R1K8PF

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