All MOSFET. SLF13N50A Datasheet

 

SLF13N50A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLF13N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.1 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F

 SLF13N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLF13N50A Datasheet (PDF)

 ..1. Size:1086K  maple semi
 slp13n50a slf13n50a.pdf

SLF13N50A SLF13N50A

LEAD FREEPbRoHSSLP13N50A / SLF13N50A500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Maple semis advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483@VGS = 10 VThis advanced technology has been especially tailored - Low gate charge ( typical 19.1nC)to minimize on-state resistance, provide superior switching - Low Crss (

 6.1. Size:1319K  maple semi
 slp13n50c slf13n50c.pdf

SLF13N50A SLF13N50A

SLP13N50C / SLF13N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 13A, 500V, RDS(on)typ. = 386m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF3711SPBF | SM2054NSV

 

 
Back to Top