SLP16N50C Datasheet and Replacement
Type Designator: SLP16N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36.5 nS
Cossⓘ - Output Capacitance: 255 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.366 Ohm
Package: TO220
SLP16N50C substitution
SLP16N50C Datasheet (PDF)
slp16n50c slf16n50c.pdf

SLP16N50C / SLF16N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
slp16n50s slf16n50s.pdf

SLP16N50S / SLF16N50S500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on) = 280m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 31nC)This advanced technology has been especially tailored - Low Crss ( typical 6.8pF)to minimize on-state resistance, provide superior switching - High rug
Datasheet: SLP12N60C , SLF12N60C , SLP12N65C , SLF12N65C , SLP13N50A , SLF13N50A , SLP13N50C , SLF13N50C , IRF540 , SLF16N50C , SLP16N50S , SLF16N50S , SLP18N50C , SLF18N50C , SLP20N50C , SLF20N50C , SLP2N65UZ .
History: HAF2011L | SFP055N80C2 | R6008FNX | SST65R1K2S2E | TK16J60W | MMDF3N04HD | SQM110N04-04
Keywords - SLP16N50C MOSFET datasheet
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History: HAF2011L | SFP055N80C2 | R6008FNX | SST65R1K2S2E | TK16J60W | MMDF3N04HD | SQM110N04-04



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