SLP16N50C Datasheet. Specs and Replacement

Type Designator: SLP16N50C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.5 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.366 Ohm

Package: TO220

SLP16N50C substitution

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SLP16N50C datasheet

 ..1. Size:1321K  maple semi
 slp16n50c slf16n50c.pdf pdf_icon

SLP16N50C

SLP16N50C / SLF16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on)typ. = 305m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 52nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒

 6.1. Size:938K  maple semi
 slp16n50s slf16n50s.pdf pdf_icon

SLP16N50C

SLP16N50S / SLF16N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on) = 280m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 31nC) This advanced technology has been especially tailored - Low Crss ( typical 6.8pF) to minimize on-state resistance, provide superior switching - High rug... See More ⇒

Detailed specifications: SLP12N60C, SLF12N60C, SLP12N65C, SLF12N65C, SLP13N50A, SLF13N50A, SLP13N50C, SLF13N50C, IRF540, SLF16N50C, SLP16N50S, SLF16N50S, SLP18N50C, SLF18N50C, SLP20N50C, SLF20N50C, SLP2N65UZ

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