SLP20N50C Specs and Replacement
Type Designator: SLP20N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 264 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 357 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.264 Ohm
Package: TO220
SLP20N50C substitution
SLP20N50C datasheet
slp20n50c slf20n50c.pdf
SLP20N50C / SLF20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 500V, RDS(on)typ. = 220m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 74.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒
Detailed specifications: SLP13N50C , SLF13N50C , SLP16N50C , SLF16N50C , SLP16N50S , SLF16N50S , SLP18N50C , SLF18N50C , IRLZ44N , SLF20N50C , SLP2N65UZ , SLF2N65UZ , SLP32N20C , SLF32N20C , SLP40N26C , SLF40N26C , SLP5N50S .
History: FDD6030BL
Keywords - SLP20N50C MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FDD6030BL
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