All MOSFET. SLF20N50C Datasheet

 

SLF20N50C Datasheet and Replacement


   Type Designator: SLF20N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 74.5 nC
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 357 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.264 Ohm
   Package: TO220F
 

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SLF20N50C Datasheet (PDF)

 ..1. Size:1295K  maple semi
 slp20n50c slf20n50c.pdf pdf_icon

SLF20N50C

SLP20N50C / SLF20N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 20A, 500V, RDS(on)typ. = 220m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 74.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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