All MOSFET. SLP2N65UZ Datasheet

 

SLP2N65UZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SLP2N65UZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm
   Package: TO220

 SLP2N65UZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SLP2N65UZ Datasheet (PDF)

 ..1. Size:1225K  maple semi
 slp2n65uz slf2n65uz.pdf

SLP2N65UZ SLP2N65UZ

SLP2N65UZ / SLF2N65UZ650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 2.0A, 650V, RDS(on) typ. = 4.3@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 6.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMV230ENEA

 

 
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