All MOSFET. SLF2N65UZ Datasheet

 

SLF2N65UZ Datasheet and Replacement


   Type Designator: SLF2N65UZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm
   Package: TO220F
 

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SLF2N65UZ Datasheet (PDF)

 ..1. Size:1225K  maple semi
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SLF2N65UZ

SLP2N65UZ / SLF2N65UZ650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 2.0A, 650V, RDS(on) typ. = 4.3@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 6.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

Datasheet: SLF16N50C , SLP16N50S , SLF16N50S , SLP18N50C , SLF18N50C , SLP20N50C , SLF20N50C , SLP2N65UZ , 10N60 , SLP32N20C , SLF32N20C , SLP40N26C , SLF40N26C , SLP5N50S , SLF5N50S , SLP5N60C , SLF5N60C .

History: HM25N08D | BLA1011-200 | AON6704A | IPA057N06N3 | QM3802S | H5N2510DL | HFS10N60S

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