SLF2N65UZ Datasheet. Specs and Replacement

Type Designator: SLF2N65UZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm

Package: TO220F

SLF2N65UZ substitution

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SLF2N65UZ datasheet

 ..1. Size:1225K  maple semi
slp2n65uz slf2n65uz.pdf pdf_icon

SLF2N65UZ

SLP2N65UZ / SLF2N65UZ 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 2.0A, 650V, RDS(on) typ. = 4.3 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 6.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒

Detailed specifications: SLF16N50C, SLP16N50S, SLF16N50S, SLP18N50C, SLF18N50C, SLP20N50C, SLF20N50C, SLP2N65UZ, IRFP260N, SLP32N20C, SLF32N20C, SLP40N26C, SLF40N26C, SLP5N50S, SLF5N50S, SLP5N60C, SLF5N60C

Keywords - SLF2N65UZ MOSFET specs

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