SLP32N20C MOSFET. Datasheet pdf. Equivalent
Type Designator: SLP32N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 256 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220
SLP32N20C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLP32N20C Datasheet (PDF)
slp32n20c slf32n20c.pdf
SLP32N20C / SLF32N20CSLP32N20C / SLF32N20C200V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using True semis - 32A, 200V, RDS(on) typ. = 0.080@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior s
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