SLP40N26C Datasheet. Specs and Replacement

Type Designator: SLP40N26C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 256 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 260 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO220

SLP40N26C substitution

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SLP40N26C datasheet

 ..1. Size:376K  maple semi
 slp40n26c slf40n26c.pdf pdf_icon

SLP40N26C

SLP40N26C / SLF40N26C SLP40N26C / SLF40N26C 260V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 40A, 260V, RDS(on) typ. = 0.12 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 55 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior s... See More ⇒

Detailed specifications: SLP18N50C, SLF18N50C, SLP20N50C, SLF20N50C, SLP2N65UZ, SLF2N65UZ, SLP32N20C, SLF32N20C, IRF3710, SLF40N26C, SLP5N50S, SLF5N50S, SLP5N60C, SLF5N60C, SLP5N65C, SLF5N65C, SLP5N65S

Keywords - SLP40N26C MOSFET specs

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