SLP40N26C Datasheet and Replacement
Type Designator: SLP40N26C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 256 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 260 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO220
SLP40N26C substitution
SLP40N26C Datasheet (PDF)
slp40n26c slf40n26c.pdf

SLP40N26C / SLF40N26CSLP40N26C / SLF40N26C260V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 40A, 260V, RDS(on) typ. = 0.12@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 55 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior s
Datasheet: SLP18N50C , SLF18N50C , SLP20N50C , SLF20N50C , SLP2N65UZ , SLF2N65UZ , SLP32N20C , SLF32N20C , P55NF06 , SLF40N26C , SLP5N50S , SLF5N50S , SLP5N60C , SLF5N60C , SLP5N65C , SLF5N65C , SLP5N65S .
History: MDP1923TH | AP05N20GI-HF
Keywords - SLP40N26C MOSFET datasheet
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History: MDP1923TH | AP05N20GI-HF



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