SLP40N26C MOSFET. Datasheet pdf. Equivalent
Type Designator: SLP40N26C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 256 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 260 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO220
SLP40N26C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLP40N26C Datasheet (PDF)
..1. Size:376K maple semi
slp40n26c slf40n26c.pdf
slp40n26c slf40n26c.pdf
SLP40N26C / SLF40N26CSLP40N26C / SLF40N26C260V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 40A, 260V, RDS(on) typ. = 0.12@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 55 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior s
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
