All MOSFET. SLP40N26C Datasheet

 

SLP40N26C Datasheet and Replacement


   Type Designator: SLP40N26C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 256 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 260 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220
 

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SLP40N26C Datasheet (PDF)

 ..1. Size:376K  maple semi
 slp40n26c slf40n26c.pdf pdf_icon

SLP40N26C

SLP40N26C / SLF40N26CSLP40N26C / SLF40N26C260V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 40A, 260V, RDS(on) typ. = 0.12@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 55 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior s

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: P1603BVA

Keywords - SLP40N26C MOSFET datasheet

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