All MOSFET. SLP5N65C Datasheet

 

SLP5N65C Datasheet and Replacement


   Type Designator: SLP5N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 164 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO220
 
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SLP5N65C Datasheet (PDF)

 ..1. Size:359K  maple semi
 slp5n65c slf5n65c.pdf pdf_icon

SLP5N65C

SLP5N65C / SLF5N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)typ. = 2.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 7.1. Size:637K  maple semi
 slp5n65s slf5n65s.pdf pdf_icon

SLP5N65C

SLP5N65S/SLF5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)Max = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingper

 8.1. Size:299K  maple semi
 slp5n60c slf5n60c.pdf pdf_icon

SLP5N65C

SLP5N60C/SLF5N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 600V, RDS(on)typ. = 2.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingpe

 9.1. Size:1128K  maple semi
 slp5n50s slf5n50s.pdf pdf_icon

SLP5N65C

LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi

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Datasheet: SLP32N20C , SLF32N20C , SLP40N26C , SLF40N26C , SLP5N50S , SLF5N50S , SLP5N60C , SLF5N60C , 2SK3878 , SLF5N65C , SLP5N65S , SLF5N65S , SLP60R190S2 , SLF60R190S2 , SLP60R380S2 , SLF60R380S2 , SLP60R850S2 .

Keywords - SLP5N65C MOSFET datasheet

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