SLP5N65C - Даташиты. Аналоги. Основные параметры
Наименование производителя: SLP5N65C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 164 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 41 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.2 Ohm
Тип корпуса: TO220
Аналог (замена) для SLP5N65C
SLP5N65C Datasheet (PDF)
slp5n65c slf5n65c.pdf

SLP5N65C / SLF5N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)typ. = 2.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
slp5n65s slf5n65s.pdf

SLP5N65S/SLF5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)Max = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingper
slp5n60c slf5n60c.pdf

SLP5N60C/SLF5N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 600V, RDS(on)typ. = 2.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingpe
slp5n50s slf5n50s.pdf

LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi
Другие MOSFET... SLP32N20C , SLF32N20C , SLP40N26C , SLF40N26C , SLP5N50S , SLF5N50S , SLP5N60C , SLF5N60C , 2SK3878 , SLF5N65C , SLP5N65S , SLF5N65S , SLP60R190S2 , SLF60R190S2 , SLP60R380S2 , SLF60R380S2 , SLP60R850S2 .
History: SM1A22NSFP | 2SK794 | BL12N60-A | BL12N60A-A | LN2312LT1G | 2SK1089
History: SM1A22NSFP | 2SK794 | BL12N60-A | BL12N60A-A | LN2312LT1G | 2SK1089



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