SLP65R420S2 Datasheet and Replacement
Type Designator: SLP65R420S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 92 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220
SLP65R420S2 substitution
SLP65R420S2 Datasheet (PDF)
slp65r420s2 slf65r420s2.pdf

SLP65R420S2/SLF65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe
Datasheet: SLP5N65S , SLF5N65S , SLP60R190S2 , SLF60R190S2 , SLP60R380S2 , SLF60R380S2 , SLP60R850S2 , SLF60R850S2 , IRF4905 , SLF65R420S2 , SLP70R420S2 , SLF70R420S2 , SLP70R600S2 , SLF70R600S2 , SLP740UZ , SLF740UZ , SLP7N60C .
History: IPD30N06S2L-13 | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | OSG80R1K4FF | AP60SL650AFI
Keywords - SLP65R420S2 MOSFET datasheet
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History: IPD30N06S2L-13 | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | OSG80R1K4FF | AP60SL650AFI



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