SLP70R420S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SLP70R420S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 37 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO220
SLP70R420S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLP70R420S2 Datasheet (PDF)
slp70r420s2 slf70r420s2.pdf
SLP70R420S2/SLF70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc
slp70r600s2 slf70r600s2.pdf
SLP70R600S2/SLF70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
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