SLF8N60C Specs and Replacement

Type Designator: SLF8N60C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

SLF8N60C substitution

- MOSFET ⓘ Cross-Reference Search

 

SLF8N60C datasheet

 ..1. Size:303K  maple semi
 slp8n60c slf8n60c.pdf pdf_icon

SLF8N60C

SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.5A, 600V, RDS(on) typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 29nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

 8.1. Size:2092K  maple semi
 slf8n65sv.pdf pdf_icon

SLF8N60C

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 8.2. Size:361K  maple semi
 slp8n65c slf8n65c.pdf pdf_icon

SLF8N60C

SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.5A, 650V, RDS(on) typ. = 1.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 29nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p... See More ⇒

Detailed specifications: SLP7N70C, SLF7N70C, SLP7N80C, SLF7N80C, SLP80R240SJ, SLF80R240SJ, SLB80R240SJ, SLP8N60C, STP80NF70, SLP8N65C, SLF8N65C, SLW18N50C, SLW20N50C, SLW24N50C, SLH24N50C, SLW9N90C, LBSS84LT1G

Keywords - SLF8N60C MOSFET specs

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