All MOSFET. SLH24N50C Datasheet

 

SLH24N50C Datasheet and Replacement


   Type Designator: SLH24N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80.5 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO247
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SLH24N50C Datasheet (PDF)

 ..1. Size:1261K  maple semi
slw24n50c slh24n50c.pdf pdf_icon

SLH24N50C

LEAD FREEPbRoHSSLW24N50C/SLH24N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 24A, 500V, RDS(on) = 0.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching -

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTD4855N-1G | FCPF7N60YDTU | SPD04N60S5 | DM12N65C | SM6A12NSFP | AP6679GI-HF

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