SLH24N50C Specs and Replacement

Type Designator: SLH24N50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80.5 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO247

SLH24N50C substitution

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SLH24N50C datasheet

 ..1. Size:1261K  maple semi
 slw24n50c slh24n50c.pdf pdf_icon

SLH24N50C

LEAD FREE Pb RoHS SLW24N50C/SLH24N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 24A, 500V, RDS(on) = 0.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 96nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - ... See More ⇒

Detailed specifications: SLB80R240SJ, SLP8N60C, SLF8N60C, SLP8N65C, SLF8N65C, SLW18N50C, SLW20N50C, SLW24N50C, IRFP250, SLW9N90C, LBSS84LT1G, S-LBSS84LT1G, LBSS84WT1G, S-LBSS84WT1G, LN2302BLT1G, S-LN2302BLT1G, LN2302LT1G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.