All MOSFET. SLH24N50C Datasheet

 

SLH24N50C Datasheet and Replacement


   Type Designator: SLH24N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80.5 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO247
 

 SLH24N50C substitution

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SLH24N50C Datasheet (PDF)

 ..1. Size:1261K  maple semi
 slw24n50c slh24n50c.pdf pdf_icon

SLH24N50C

LEAD FREEPbRoHSSLW24N50C/SLH24N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 24A, 500V, RDS(on) = 0.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching -

Datasheet: SLB80R240SJ , SLP8N60C , SLF8N60C , SLP8N65C , SLF8N65C , SLW18N50C , SLW20N50C , SLW24N50C , STF13NM60N , SLW9N90C , LBSS84LT1G , S-LBSS84LT1G , LBSS84WT1G , S-LBSS84WT1G , LN2302BLT1G , S-LN2302BLT1G , LN2302LT1G .

History: UPA1760

Keywords - SLH24N50C MOSFET datasheet

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