SLH24N50C Datasheet and Replacement
Type Designator: SLH24N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 80.5 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO247
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SLH24N50C Datasheet (PDF)
slw24n50c slh24n50c.pdf

LEAD FREEPbRoHSSLW24N50C/SLH24N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 24A, 500V, RDS(on) = 0.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching -
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NTD4855N-1G | FCPF7N60YDTU | SPD04N60S5 | DM12N65C | SM6A12NSFP | AP6679GI-HF
Keywords - SLH24N50C MOSFET datasheet
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History: NTD4855N-1G | FCPF7N60YDTU | SPD04N60S5 | DM12N65C | SM6A12NSFP | AP6679GI-HF



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