SLH24N50C MOSFET. Datasheet pdf. Equivalent
Type Designator: SLH24N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 96 nC
trⓘ - Rise Time: 80.5 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO247
SLH24N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLH24N50C Datasheet (PDF)
..1. Size:1261K maple semi
slw24n50c slh24n50c.pdf
slw24n50c slh24n50c.pdf
LEAD FREEPbRoHSSLW24N50C/SLH24N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 24A, 500V, RDS(on) = 0.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching -
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