All MOSFET. S-LN2306LT1G Datasheet

 

S-LN2306LT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: S-LN2306LT1G
   Marking Code: N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 1.4 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 12 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
   Maximum Drain Current |Id|: 5.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 80.85 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm
   Package: SOT23

 S-LN2306LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S-LN2306LT1G Datasheet (PDF)

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 ln2306lt1g s-ln2306lt1g.pdf

S-LN2306LT1G S-LN2306LT1G

LN2306LT1GS-LN2306LT1G30V N-Channel Enhancement-Mode MOSFET1. FEATURESVDS= 30VRDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43mRDS(ON), VGS@2.5V, IDS@4.0A = 62mSOT23(TO-236) We declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring

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 ln2302blt1g s-ln2302blt1g.pdf

S-LN2306LT1G S-LN2306LT1G

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET FEATURES RDS(ON)85m@VGS=4.5V LN2302BLT1G RDS(ON)115m@VGS=2.5V S-LN2302BLT1G RDS(ON)135m@VGS=1.8V 3 Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 12 S- Prefix for Automotive and Other Applications Re

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 ln2312lt1g s-ln2312lt1g.pdf

S-LN2306LT1G S-LN2306LT1G

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET VDS= 20V LN2312LT1GRDS(ON), Vgs@4.5V, Ids@5.0A = 41m S-LN2312LT1GRDS(ON), Vgs@2.5V, Ids@4.5A = 47m Features 3Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1we declare that the material of product 2compliance with RoHS requirements.SOT 23 (TO236AB)

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