All MOSFET. LNA2306LT1G Datasheet

 

LNA2306LT1G Datasheet and Replacement


   Type Designator: LNA2306LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT23E
 

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LNA2306LT1G Datasheet (PDF)

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LNA2306LT1G

LNA2306LT1GS-LNA2306LT1G30V N-Channel Enhancement-Mode MOSFET1. FEATURESVDS= 30VRDS(ON), VGS@10V, IDS@5.8A = 38m RDS(ON), VGS@4.5V, IDS@5.0A = 43mRDS(ON), VGS@2.5V, IDS@4.0A = 62mSOT23EWe declare that the material of product compliance with RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringuniq

Datasheet: S-LN2306LT1G , LN2312LT1G , S-LN2312LT1G , LN2324DT2AG , LN235N3T5G , LN4501LT1G , LN8340DT1AG , LN8342DT1AG , P60NF06 , S-LNA2306LT1G , S-LNTA4001NT1G , LNTK2575LT1G , S-LNTK2575LT1G , LNTK3043PT5G , S-LNTK3043PT5G , LP0404N3T5G , LP1480WT1G .

History: 2SK2365-Z | DH100P30B | 2SK3818 | STF6N65K3 | AP09N20H | 2SK3819 | SM2321PSA

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