LNTK3043PT5G Specs and Replacement

Type Designator: LNTK3043PT5G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 8.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: SOT723

LNTK3043PT5G substitution

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LNTK3043PT5G datasheet

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 lntk3043pt5g s-lntk3043pt5g.pdf pdf_icon

LNTK3043PT5G

LESHAN RADIO COMPANY, LTD. Power MOSFET 20 V, 285 mA, P-Channel with ESD Protection, SOT-723 LNTK3043PT5G Features S-LNTK3043PT5G Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment 1.5 W @ 4.5 V Low Threshold Levels, VGS(TH) ... See More ⇒

Detailed specifications: LN4501LT1G, LN8340DT1AG, LN8342DT1AG, LNA2306LT1G, S-LNA2306LT1G, S-LNTA4001NT1G, LNTK2575LT1G, S-LNTK2575LT1G, IRFZ48N, S-LNTK3043PT5G, LP0404N3T5G, LP1480WT1G, S-LP1480WT1G, LP2301BLT1G, LP2301BLT3G, S-LP2305DSLT1G, S-LP2307LT1G

Keywords - LNTK3043PT5G MOSFET specs

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