LP0404N3T5G Specs and Replacement

Type Designator: LP0404N3T5G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.715 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.2 nS

Cossⓘ - Output Capacitance: 18.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: SOT883

LP0404N3T5G substitution

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LP0404N3T5G datasheet

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LP0404N3T5G

LP0404N3T5G 20V, P-Channel (D-S) MOSFET 1. FEATURES VDS = -20V RDS(ON) 0.48 ,VGS@-4.5V,IDS@-780mA RDS(ON) 0.67 ,VGS@-2.5V,IDS@-660mA RDS(ON) 0.95 ,VGS@-1.8V,IDS@-100mA RDS(ON) 2.2 ,VGS@-1.5V,IDS@-100mA Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. We declare that the material of pr... See More ⇒

Detailed specifications: LN8342DT1AG, LNA2306LT1G, S-LNA2306LT1G, S-LNTA4001NT1G, LNTK2575LT1G, S-LNTK2575LT1G, LNTK3043PT5G, S-LNTK3043PT5G, IRF830, LP1480WT1G, S-LP1480WT1G, LP2301BLT1G, LP2301BLT3G, S-LP2305DSLT1G, S-LP2307LT1G, LP2309LT1G, LP2309LT3G

Keywords - LP0404N3T5G MOSFET specs

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