All MOSFET. LP0404N3T5G Datasheet

 

LP0404N3T5G Datasheet and Replacement


   Type Designator: LP0404N3T5G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.715 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.2 nS
   Cossⓘ - Output Capacitance: 18.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: SOT883
 

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LP0404N3T5G Datasheet (PDF)

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LP0404N3T5G

LP0404N3T5G20V, P-Channel (D-S) MOSFET1. FEATURESVDS = -20VRDS(ON)0.48,VGS@-4.5V,IDS@-780mARDS(ON)0.67,VGS@-2.5V,IDS@-660mARDS(ON)0.95,VGS@-1.8V,IDS@-100mARDS(ON)2.2,VGS@-1.5V,IDS@-100mASuper high density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capability.We declare that the material of pr

Datasheet: LN8342DT1AG , LNA2306LT1G , S-LNA2306LT1G , S-LNTA4001NT1G , LNTK2575LT1G , S-LNTK2575LT1G , LNTK3043PT5G , S-LNTK3043PT5G , IRF1405 , LP1480WT1G , S-LP1480WT1G , LP2301BLT1G , LP2301BLT3G , S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G .

History: FQD2N30TM | SM3307PSQG | DMP2018LFK | NVMFS4C310N | PMPB10XNEA | P1004BS | PJC7407

Keywords - LP0404N3T5G MOSFET datasheet

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