All MOSFET. STK2N80 Datasheet

 

STK2N80 Datasheet and Replacement


   Type Designator: STK2N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: SOT82
 

 STK2N80 substitution

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STK2N80 Datasheet (PDF)

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STK2N80

STK2N80N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTK2N80 800 V

 9.1. Size:184K  st
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STK2N80

STK2N80N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK2N80 800 V

 9.2. Size:178K  st
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STK2N80

STK2NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK2NA60 600 V

 9.3. Size:347K  st
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STK2N80

STK2NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTK2NA60 600 V

SHOW MORE

Datasheet: STK18N05L , STK18N06 , STK18N06L , STK22N05 , STK22N06 , STK23N05L , STK23N06L , STK2N50 , IRFB4227 , STK2NA60 , STK3055E , STK3N50 , STK3NA50 , STK4N25 , STK4N30 , STK4N30L , STK4N40 .

History: VS6016HS-A

Keywords - STK2N80 MOSFET datasheet

 STK2N80 cross reference
 STK2N80 equivalent finder
 STK2N80 lookup
 STK2N80 substitution
 STK2N80 replacement

 

 
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