All MOSFET. S-LP3415ELT1G Datasheet

 

S-LP3415ELT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: S-LP3415ELT1G
   Marking Code: P15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.59 nC
   trⓘ - Rise Time: 1604 nS
   Cossⓘ - Output Capacitance: 128.57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23

 S-LP3415ELT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S-LP3415ELT1G Datasheet (PDF)

 ..1. Size:312K  lrc
 lp3415elt1g s-lp3415elt1g.pdf

S-LP3415ELT1G S-LP3415ELT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3415ELT1GV = -20V DSS-LP3415ELT1GR Vgs@-4.5V, Ids@-4A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-4A = 753mRDS(ON), Vgs@-1.8V, Ids@-2A = 85Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (

 8.1. Size:997K  lrc
 lp3407lt1g s-lp3407lt1g.pdf

S-LP3415ELT1G S-LP3415ELT1G

LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HGN195N15SL | IXFA10N60P | SST70R380S2 | IPW60R125CP

 

 
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