All MOSFET. S-LP3415ELT1G Datasheet

 

S-LP3415ELT1G Datasheet and Replacement


   Type Designator: S-LP3415ELT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1604 nS
   Cossⓘ - Output Capacitance: 128.57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

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S-LP3415ELT1G Datasheet (PDF)

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S-LP3415ELT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP3415ELT1GV = -20V DSS-LP3415ELT1GR Vgs@-4.5V, Ids@-4A = 60 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-4A = 753mRDS(ON), Vgs@-1.8V, Ids@-2A = 85Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2we declare that the material of product SOT 23 (

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S-LP3415ELT1G

LESHAN RADIO COMPANY, LTD.LP3407LT1G30V P-Channel Enhancement-Mode MOSFETS-LP3407LT1GVDS -30V3ID (VGS = -10V)-4.1ARDS(ON) (VGS = -10V)

Datasheet: S-LP2305DSLT1G , S-LP2307LT1G , LP2309LT1G , LP2309LT3G , LP2501DT1G , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , IRFP064N , S-LP4101LT1G , LRC6N33YT1G , LSI1012LT1G , S-LSI1012LT1G , S-SRK7002LT1G , 2N65F , 2N65E , 2N65D .

History: UTM6016G-K08-5060-R | 2SK888 | WMN30N80M3 | 2SJ605-Z | DH150N12B | SFF240J | BUZ83

Keywords - S-LP3415ELT1G MOSFET datasheet

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