All MOSFET. S-LP4101LT1G Datasheet

 

S-LP4101LT1G Datasheet and Replacement


   Type Designator: S-LP4101LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.73 nS
   Cossⓘ - Output Capacitance: 145.54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
 

 S-LP4101LT1G substitution

   - MOSFET ⓘ Cross-Reference Search

 

S-LP4101LT1G Datasheet (PDF)

 ..1. Size:1030K  lrc
 lp4101lt1g s-lp4101lt1g.pdf pdf_icon

S-LP4101LT1G

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET V = -20V DSLP4101LT1GR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), S-LP4101LT1GmRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150Features 3Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 2we declar

Datasheet: S-LP2307LT1G , LP2309LT1G , LP2309LT3G , LP2501DT1G , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , BS170 , LRC6N33YT1G , LSI1012LT1G , S-LSI1012LT1G , S-SRK7002LT1G , 2N65F , 2N65E , 2N65D , 2N65N .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - S-LP4101LT1G MOSFET datasheet

 S-LP4101LT1G cross reference
 S-LP4101LT1G equivalent finder
 S-LP4101LT1G lookup
 S-LP4101LT1G substitution
 S-LP4101LT1G replacement

 

 
Back to Top

 


 
.