S-LP4101LT1G Specs and Replacement

Type Designator: S-LP4101LT1G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.73 nS

Cossⓘ - Output Capacitance: 145.54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT23

S-LP4101LT1G substitution

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S-LP4101LT1G datasheet

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S-LP4101LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET V = -20V DS LP4101LT1G R Vgs@-4.5V, Ids@-2.8A = 100 m DS(ON), S-LP4101LT1G m RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance 1 Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 2 we declar... See More ⇒

Detailed specifications: S-LP2307LT1G, LP2309LT1G, LP2309LT3G, LP2501DT1G, LP3218DT1G, S-LP3407LT1G, LP3415ELT1G, S-LP3415ELT1G, IRF730, LRC6N33YT1G, LSI1012LT1G, S-LSI1012LT1G, S-SRK7002LT1G, 2N65F, 2N65E, 2N65D, 2N65N

Keywords - S-LP4101LT1G MOSFET specs

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