LRC6N33YT1G Specs and Replacement

Type Designator: LRC6N33YT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: DFN2020-6D

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LRC6N33YT1G datasheet

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LRC6N33YT1G

LRC6N33YT1G General Purpose Transistors with Power MOSFET 1. FEATURES ESD Protected 1500V High current capacity in compact package. Epitaxial planar type. Low threshold voltage (VGS(th) 0.9V...1.5V) DFN2020-6D makes it ideal for low voltage applications. We declare that the material of product compliance with RoHS requirements and Halogen Free. S- pre... See More ⇒

Detailed specifications: LP2309LT1G, LP2309LT3G, LP2501DT1G, LP3218DT1G, S-LP3407LT1G, LP3415ELT1G, S-LP3415ELT1G, S-LP4101LT1G, IRFZ44N, LSI1012LT1G, S-LSI1012LT1G, S-SRK7002LT1G, 2N65F, 2N65E, 2N65D, 2N65N, 2N65M

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.