All MOSFET. LRC6N33YT1G Datasheet

 

LRC6N33YT1G Datasheet and Replacement


   Type Designator: LRC6N33YT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: DFN2020-6D
 

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LRC6N33YT1G Datasheet (PDF)

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LRC6N33YT1G

LRC6N33YT1GGeneral Purpose Transistors with Power MOSFET1. FEATURESESD Protected:1500VHigh current capacity in compact package.Epitaxial planar type.Low threshold voltage (VGS(th): 0.9V...1.5V)DFN2020-6Dmakes it ideal for low voltage applications.We declare that the material of product compliance with RoHS requirements and Halogen Free. S- pre

Datasheet: LP2309LT1G , LP2309LT3G , LP2501DT1G , LP3218DT1G , S-LP3407LT1G , LP3415ELT1G , S-LP3415ELT1G , S-LP4101LT1G , IRFZ44N , LSI1012LT1G , S-LSI1012LT1G , S-SRK7002LT1G , 2N65F , 2N65E , 2N65D , 2N65N , 2N65M .

History: FCH023N65S3 | 2SK682 | SSF2816E | IRFR3708TR | 2SK674 | 2SK2602 | WMM22N50C4

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