2N65D PDF and Equivalents Search

R 2N65 S E M I C O N D U C T O R 650V N-Channel Power MOSFET FEATURES PRODUCT SUMMARY RDS(ON)... See More ⇒

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S... See More ⇒

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N65D N- MOS / N-CHANNEL POWER MOSFET SIF2N65D N- MOS / N-CHANN... See More ⇒

SVF2N65F/N/MJ/D 2A 650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS ... See More ⇒

N N-CHANNEL MOSFET FHP2N65D/FHF2N65D/FHU2N65D/FHD2N65D MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 650V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/... See More ⇒

SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY2N65D / HY2N65M 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha... See More ⇒

JFPC12N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

SW2N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V ID 2A High ruggedness Low RDS(ON) (Typ 3.9 )@VGS=10V RDS(ON) 3.9 Low Gate Charge (Typ 9nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Adapter,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produc... See More ⇒

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-220F TO-262 TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger,LED,PC Power 3 3 3 1. Gate 2.... See More ⇒

SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS 650V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th... See More ⇒

SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS 650V Features ID 12A High ruggedness RDS(ON) 0.66 Low RDS(ON) (Typ 0.66 )@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source... See More ⇒

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-262 TO-220F TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charge,LED,PC Power 3 3 3 1. Gate 2... See More ⇒

SW22N65D N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 22A High ruggedness RDS(ON) 0.22 Low RDS(ON) (Typ 0.22 )@VGS=10V Low Gate Charge (Typ 123nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This p... See More ⇒

SW2N65DB N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS 650V Features ID 2A High ruggedness RDS(ON) 3.9 Low RDS(ON) (Typ 3.9 )@VGS=10V Low Gate Charge (Typ 11nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, Adaptor 1. Gate 2. Drain 3. Source 3 General Description This power ... See More ⇒

QM02N65D 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 8 2A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM02N65D meet ... See More ⇒

WML12N65D1B WMK12N65D1B 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =1... See More ⇒

WML12N65D1 WMK12N65D1 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =10V... See More ⇒

nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N65F,CS2N65D,CS2N65U 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N65F TO-220F CS2N65F... See More ⇒

2N65 Series N-Channel MOSFET 2A, 650V, N H FQU2N65C H2N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 2N65 FQD2N65C H2N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 2N65 Series Pin Assignment APPLICATION ID=2A... See More ⇒