2N65D - описание и поиск аналогов

 ..1. Size:143K  jh
 2n65 2n65f 2n65e 2n65d 2n65n 2n65m.pdf 

R 2N65 S E M I C O N D U C T O R 650V N-Channel Power MOSFET FEATURES PRODUCT SUMMARY RDS(ON)

 0.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf 

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S

 0.2. Size:332K  sisemi
 sif2n65d.pdf 

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N65D N- MOS / N-CHANNEL POWER MOSFET SIF2N65D N- MOS / N-CHANN

 0.3. Size:479K  silan
 svf2n65f svf2n65n svf2n65mj svf2n65d.pdf 

SVF2N65F/N/MJ/D 2A 650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS

 0.4. Size:979K  feihonltd
 fhp2n65d fhf2n65d fhu2n65d fhd2n65d.pdf 

N N-CHANNEL MOSFET FHP2N65D/FHF2N65D/FHU2N65D/FHD2N65D MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 650V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

 0.5. Size:168K  hy
 hy2n65d.pdf 

SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY2N65D / HY2N65M 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

 0.6. Size:819K  jiaensemi
 jfpc12n65d.pdf 

JFPC12N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.7. Size:705K  samwin
 swf2n65d.pdf 

SW2N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V ID 2A High ruggedness Low RDS(ON) (Typ 3.9 )@VGS=10V RDS(ON) 3.9 Low Gate Charge (Typ 9nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Adapter,LED 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produc

 0.8. Size:1141K  samwin
 swf12n65d swu12n65d swp12n65d swb12n65d.pdf 

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-220F TO-262 TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger,LED,PC Power 3 3 3 1. Gate 2.

 0.9. Size:685K  samwin
 swmn12n65da.pdf 

SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS 650V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th

 0.10. Size:673K  samwin
 swmn12n65d swy12n65d.pdf 

SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS 650V Features ID 12A High ruggedness RDS(ON) 0.66 Low RDS(ON) (Typ 0.66 )@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source

 0.11. Size:1147K  samwin
 sw12n65d swf12n65d swu12n65d swp12n65d swb12n65d.pdf 

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-262 TO-220F TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charge,LED,PC Power 3 3 3 1. Gate 2

 0.12. Size:643K  samwin
 swt22n65d.pdf 

SW22N65D N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 22A High ruggedness RDS(ON) 0.22 Low RDS(ON) (Typ 0.22 )@VGS=10V Low Gate Charge (Typ 123nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This p

 0.13. Size:644K  samwin
 swf2n65db.pdf 

SW2N65DB N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS 650V Features ID 2A High ruggedness RDS(ON) 3.9 Low RDS(ON) (Typ 3.9 )@VGS=10V Low Gate Charge (Typ 11nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, Adaptor 1. Gate 2. Drain 3. Source 3 General Description This power

 0.14. Size:202K  ubiq
 qm02n65d.pdf 

QM02N65D 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM02N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 8 2A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM02N65D meet

 0.15. Size:1384K  way-on
 wml12n65d1b wmk12n65d1b.pdf 

WML12N65D1B WMK12N65D1B 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =1

 0.16. Size:828K  way-on
 wml12n65d1 wmk12n65d1.pdf 

WML12N65D1 WMK12N65D1 650V 12A 0.58 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G Features D G S D S V =700V@T DS jmax Typ.R =0.58 @V =10V

 0.17. Size:702K  convert
 cs2n65f cs2n65d cs2n65u.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N65F,CS2N65D,CS2N65U 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N65F TO-220F CS2N65F

 0.18. Size:375K  cn haohai electr
 h2n65u h2n65d.pdf 

2N65 Series N-Channel MOSFET 2A, 650V, N H FQU2N65C H2N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 2N65 FQD2N65C H2N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 2N65 Series Pin Assignment APPLICATION ID=2A