LNB20N60 Datasheet. Specs and Replacement
Type Designator: LNB20N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46.1 nS
Cossⓘ - Output Capacitance: 263 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-247
LNB20N60 substitution
- MOSFET ⓘ Cross-Reference Search
LNB20N60 datasheet
lnc20n60 lnd20n60 lnb20n60.pdf
LNC20N60/ LND20N60/LNB20N60 Lonten N-channel 600V, 20A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planer VDMOS technology. The I 20A D resulting device has low conduction resistance, R 0.45 DS(on),max superior switching performance and high avalanche Q 63.7 nC g,typ energy. Features Low R DS(on) Low gate charge ... See More ⇒
lnc20n65 lnd20n65 lnb20n65.pdf
LNC20N65/LND20N65/LNB20N65 Lonten N-channel 650V, 20A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 20A D resulting device has low conduction resistance, R 0.5 DS(on),max superior switching performance and high avalanche Q 58.3 nC g,typ energy. Features Low R DS(on) Low gate charge (t... See More ⇒
Detailed specifications: 2N65M, 5N65D, 5N65E, 5N65M, 5N65N, 6N65F, 6N65D, LNB10R040W3, AO3400, LNB20N65, LNB4N80, LNC045R090, LNC04R035B, LNC04R050, LNC06R062, LNC06R079, LNC06R110
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