All MOSFET. LNB20N60 Datasheet

 

LNB20N60 Datasheet and Replacement


   Type Designator: LNB20N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46.1 nS
   Cossⓘ - Output Capacitance: 263 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO-247
 

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LNB20N60 Datasheet (PDF)

 ..1. Size:1196K  lonten
 lnc20n60 lnd20n60 lnb20n60.pdf pdf_icon

LNB20N60

LNC20N60/ LND20N60/LNB20N60Lonten N-channel 600V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.45DS(on),maxsuperior switching performance and high avalanche Q 63.7 nCg,typenergy.Features Low RDS(on) Low gate charge

 7.1. Size:1197K  lonten
 lnc20n65 lnd20n65 lnb20n65.pdf pdf_icon

LNB20N60

LNC20N65/LND20N65/LNB20N65Lonten N-channel 650V, 20A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 20ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 58.3 nCg,typenergy.Features Low RDS(on) Low gate charge (t

Datasheet: 2N65M , 5N65D , 5N65E , 5N65M , 5N65N , 6N65F , 6N65D , LNB10R040W3 , IRF3710 , LNB20N65 , LNB4N80 , LNC045R090 , LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , LNC06R110 .

Keywords - LNB20N60 MOSFET datasheet

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