STK3N50 PDF and Equivalents Search

 

STK3N50 Specs and Replacement

Type Designator: STK3N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.6 Ohm

Package: SOT82

STK3N50 substitution

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STK3N50 datasheet

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 stk3n50.pdf pdf_icon

STK3N50

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STK3N50

STK3NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STK3NA50 500 V ... See More ⇒

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 stk3na60.pdf pdf_icon

STK3N50

STK3NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STK3NA60 600 V ... See More ⇒

Detailed specifications: STK22N05 , STK22N06 , STK23N05L , STK23N06L , STK2N50 , STK2N80 , STK2NA60 , STK3055E , 2N7000 , STK3NA50 , STK4N25 , STK4N30 , STK4N30L , STK4N40 , STK6N20 , STK9N10 , STP10NA40 .

History: MXP1007AT | IRF9Z34S

Keywords - STK3N50 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
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