LNC04R050 Datasheet and Replacement
Type Designator: LNC04R050
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 213.6 nS
Cossⓘ - Output Capacitance: 410.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-220
LNC04R050 substitution
LNC04R050 Datasheet (PDF)
lnc04r050.pdf
LNC04R050Lonten N-channel 40V, 110A, 5.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 5.0mGStechnology. This advanced technology has been I 110ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high ener
lnc04r035b lnd04r035b.pdf
LNC04R035B/ LND04R035BLonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 3.5mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withst
lnc045r090 lng045r090 lnh045r090.pdf
LNC045R090/LNG045R090/LNH045R090Lonten N-channel 45V, 70A, 9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 9mGStechnology. This advanced technology has been I 70ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
Datasheet: 6N65F , 6N65D , LNB10R040W3 , LNB20N60 , LNB20N65 , LNB4N80 , LNC045R090 , LNC04R035B , IRFB4115 , LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , LNC06R230 , LNC07R085H , LNC08R055W3 .
Keywords - LNC04R050 MOSFET datasheet
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