All MOSFET. LNC06R110 Datasheet

 

LNC06R110 Datasheet and Replacement


   Type Designator: LNC06R110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 167.5 nS
   Cossⓘ - Output Capacitance: 209 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220
 

 LNC06R110 substitution

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LNC06R110 Datasheet (PDF)

 ..1. Size:928K  lonten
lnc06r110 lne06r110.pdf pdf_icon

LNC06R110

LNC06R110/LNE06R110Lonten N-channel 60V, 60A, 11m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 11mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

 7.1. Size:1062K  lonten
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf pdf_icon

LNC06R110

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 8.1. Size:1130K  lonten
lnc06r062 lnd06r062 lne06r062.pdf pdf_icon

LNC06R110

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit

 8.2. Size:1191K  lonten
lnc06r079 lnd06r079 lne06r079.pdf pdf_icon

LNC06R110

LNC06R079/LND06R079/LNE06R079Lonten N-channel 60V, 90A, 7.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.9mGStechnology. This advanced technology has been I 90ADespecially tailored to minimize on-state resistance,provide superior switching performance, and wit

Datasheet: LNB20N60 , LNB20N65 , LNB4N80 , LNC045R090 , LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , 2SK3878 , LNC06R140 , LNC06R200 , LNC06R230 , LNC07R085H , LNC08R055W3 , LNC08R085 , LNC08R160 , LNC08R220 .

Keywords - LNC06R110 MOSFET datasheet

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