LNC06R110 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LNC06R110
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 167.5 ns
Cossⓘ - Выходная емкость: 209 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: TO-220
Аналог (замена) для LNC06R110
LNC06R110 Datasheet (PDF)
lnc06r110 lne06r110.pdf

LNC06R110/LNE06R110Lonten N-channel 60V, 60A, 11m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 11mGStechnology. This advanced technology has been I 60ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
lnc06r062 lnd06r062 lne06r062.pdf

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit
lnc06r079 lnd06r079 lne06r079.pdf

LNC06R079/LND06R079/LNE06R079Lonten N-channel 60V, 90A, 7.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.9mGStechnology. This advanced technology has been I 90ADespecially tailored to minimize on-state resistance,provide superior switching performance, and wit
Другие MOSFET... LNB20N60 , LNB20N65 , LNB4N80 , LNC045R090 , LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , 2SK3878 , LNC06R140 , LNC06R200 , LNC06R230 , LNC07R085H , LNC08R055W3 , LNC08R085 , LNC08R160 , LNC08R220 .
History: CTD10N033 | FIR75N075G | P3506DTF | TTD120N03AT | TTP100N04AT | JCS86N25WT | AP2764AI
History: CTD10N033 | FIR75N075G | P3506DTF | TTD120N03AT | TTP100N04AT | JCS86N25WT | AP2764AI



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