LNC08R085 Datasheet. Specs and Replacement

Type Designator: LNC08R085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 256 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-220

LNC08R085 substitution

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LNC08R085 datasheet

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 lnc08r085 lnd08r085 lne08r085.pdf pdf_icon

LNC08R085

LNC08R085 LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with ... See More ⇒

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 lnc08r055w3 lnd08r055w3 lne08r055w3.pdf pdf_icon

LNC08R085

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per... See More ⇒

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 lnc08r160 lne08r160.pdf pdf_icon

LNC08R085

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high... See More ⇒

 8.2. Size:860K  lonten
 lnc08r220.pdf pdf_icon

LNC08R085

LNC08R220 Lonten N-channel 80V, 45A, 22m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 80V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 22m GS technology. This advanced technology has been I 45A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy p... See More ⇒

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Detailed specifications: LNC06R062, LNC06R079, LNC06R110, LNC06R140, LNC06R200, LNC06R230, LNC07R085H, LNC08R055W3, 2SK3878, LNC08R160, LNC08R220, LNC10N60, LNC10N65, LNC10R040W3, LNC10R180, LNC12N60, LNC12N65

Keywords - LNC08R085 MOSFET specs

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