LNC08R085 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LNC08R085
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 56 ns
Cossⓘ - Выходная емкость: 256 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO-220
Аналог (замена) для LNC08R085
LNC08R085 Datasheet (PDF)
lnc08r085 lnd08r085 lne08r085.pdf

LNC08R085\LND08R085/LNE08R085 Lonten N-channel 80V, 80A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with
lnc08r055w3 lnd08r055w3 lne08r055w3.pdf

LNC08R055W3/LND08R055W3/LNE08R055W3 Lonten N-channel 85V, 120A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching per
lnc08r160 lne08r160.pdf

LNC08R160/LNE08R160 Lonten N-channel 80V, 60A, 16m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 16m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnc08r220.pdf

LNC08R220Lonten N-channel 80V, 45A, 22m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 80VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 22mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p
Другие MOSFET... LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , LNC06R230 , LNC07R085H , LNC08R055W3 , IRFP260 , LNC08R160 , LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 , LNC10R180 , LNC12N60 , LNC12N65 .
History: HUFA75639S3ST | HGP115N15S | IRFSL23N15DPBF | STD5407NT4G | HSU6008 | SPD03N60C3 | DH100P28
History: HUFA75639S3ST | HGP115N15S | IRFSL23N15DPBF | STD5407NT4G | HSU6008 | SPD03N60C3 | DH100P28



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