LNC16N60 Datasheet and Replacement
Type Designator: LNC16N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
LNC16N60 substitution
LNC16N60 Datasheet (PDF)
lnd16n60 lnc16n60.pdf

LND16N60/LNC16N60Lonten N-channel 600V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 53.2 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 5
lnd16n65 lnc16n65.pdf

LND16N65/LNC16N65Lonten N-channel 650V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.6DS(on),maxsuperior switching performance and high avalanche Q 53.9Cg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 53.
Datasheet: LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 , LNC10R180 , LNC12N60 , LNC12N65 , LNC13N50 , IRF9540N , LNC16N65 , LNC18N50 , LNC20N60 , LNC20N65 , LNC2N60 , LNC2N65 , LNC4N60 , LNC4N65 .
History: MDF9N50FTH | IRF9383MPBF | SPW47N60C3 | IRF2907ZL | IRFB7430 | IPU60R2K0C6 | FMR19N60E
Keywords - LNC16N60 MOSFET datasheet
LNC16N60 cross reference
LNC16N60 equivalent finder
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History: MDF9N50FTH | IRF9383MPBF | SPW47N60C3 | IRF2907ZL | IRFB7430 | IPU60R2K0C6 | FMR19N60E



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