LNC16N60 Datasheet. Specs and Replacement
Type Designator: LNC16N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
LNC16N60 substitution
- MOSFET ⓘ Cross-Reference Search
LNC16N60 datasheet
lnd16n60 lnc16n60.pdf
LND16N60/LNC16N60 Lonten N-channel 600V, 16A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planer VDMOS technology. The I 16A D resulting device has low conduction resistance, R 0.5 DS(on),max superior switching performance and high avalanche Q 53.2 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q = 5... See More ⇒
lnd16n65 lnc16n65.pdf
LND16N65/LNC16N65 Lonten N-channel 650V, 16A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 16A D resulting device has low conduction resistance, R 0.6 DS(on),max superior switching performance and high avalanche Q 53.9C g,typ energy. Features Low R DS(on) Low gate charge (typ. Q = 53.... See More ⇒
Detailed specifications: LNC08R220, LNC10N60, LNC10N65, LNC10R040W3, LNC10R180, LNC12N60, LNC12N65, LNC13N50, SPP20N60C3, LNC16N65, LNC18N50, LNC20N60, LNC20N65, LNC2N60, LNC2N65, LNC4N60, LNC4N65
Keywords - LNC16N60 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
