LNC16N60 Datasheet and Replacement
Type Designator: LNC16N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 53.2 nC
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
LNC16N60 substitution
LNC16N60 Datasheet (PDF)
lnd16n60 lnc16n60.pdf

LND16N60/LNC16N60Lonten N-channel 600V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 53.2 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 5
lnd16n65 lnc16n65.pdf

LND16N65/LNC16N65Lonten N-channel 650V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.6DS(on),maxsuperior switching performance and high avalanche Q 53.9Cg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 53.
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
Keywords - LNC16N60 MOSFET datasheet
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