All MOSFET. LNC16N60 Datasheet

 

LNC16N60 Datasheet and Replacement


   Type Designator: LNC16N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220
 

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LNC16N60 Datasheet (PDF)

 ..1. Size:1091K  lonten
 lnd16n60 lnc16n60.pdf pdf_icon

LNC16N60

LND16N60/LNC16N60Lonten N-channel 600V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 53.2 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 5

 7.1. Size:1111K  lonten
 lnd16n65 lnc16n65.pdf pdf_icon

LNC16N60

LND16N65/LNC16N65Lonten N-channel 650V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.6DS(on),maxsuperior switching performance and high avalanche Q 53.9Cg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 53.

Datasheet: LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 , LNC10R180 , LNC12N60 , LNC12N65 , LNC13N50 , AON7410 , LNC16N65 , LNC18N50 , LNC20N60 , LNC20N65 , LNC2N60 , LNC2N65 , LNC4N60 , LNC4N65 .

History: IRF7465 | AP6P070S | 2SJ325-Z | APT30N60BC6 | BLF6G10L-40BRN | QM04N65B | IRF7468

Keywords - LNC16N60 MOSFET datasheet

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