LND16N60 PDF and Equivalents Search

 

LND16N60 Specs and Replacement

Type Designator: LND16N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-220F

LND16N60 substitution

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LND16N60 datasheet

 ..1. Size:1091K  lonten
 lnd16n60 lnc16n60.pdf pdf_icon

LND16N60

LND16N60/LNC16N60 Lonten N-channel 600V, 16A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planer VDMOS technology. The I 16A D resulting device has low conduction resistance, R 0.5 DS(on),max superior switching performance and high avalanche Q 53.2 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q = 5... See More ⇒

 7.1. Size:1111K  lonten
 lnd16n65 lnc16n65.pdf pdf_icon

LND16N60

LND16N65/LNC16N65 Lonten N-channel 650V, 16A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 16A D resulting device has low conduction resistance, R 0.6 DS(on),max superior switching performance and high avalanche Q 53.9C g,typ energy. Features Low R DS(on) Low gate charge (typ. Q = 53.... See More ⇒

Detailed specifications: LND08R085, LND10N60, LND10N65, LND10R040W3, LND10R180, LND12N60, LND12N65, LND13N50, AO3407, LND16N65, LND18N50, LND20N60, LND20N65, LND2N60, LND2N65, LND4N60, LND4N65

Keywords - LND16N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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