All MOSFET. LND16N65 Datasheet

 

LND16N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LND16N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53.9 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-220F

 LND16N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LND16N65 Datasheet (PDF)

 ..1. Size:1111K  lonten
 lnd16n65 lnc16n65.pdf

LND16N65 LND16N65

LND16N65/LNC16N65Lonten N-channel 650V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.6DS(on),maxsuperior switching performance and high avalanche Q 53.9Cg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 53.

 7.1. Size:1091K  lonten
 lnd16n60 lnc16n60.pdf

LND16N65 LND16N65

LND16N60/LNC16N60Lonten N-channel 600V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 53.2 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 5

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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