LND5N65B MOSFET Datasheet: N-Ch, 650V, 5A. Full specification with pinout and replacement list

LND5N65B Specs and Replacement

Type Designator: LND5N65B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-220F

LND5N65B substitution

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LND5N65B datasheet

..1. Size:1292K lonten
lnc5n65b lnd5n65b lng5n65b lnh5n65b.pdf pdf_icon

LNC5N65B LND5N65B LNG5N65B LNH5N65B Lonten N-channel 650V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 2.1 DS(on),max superior switching performance and high avalanche Q 14.5 nC g,typ energy. Features Low R DS(on) Low gate ch... See More ⇒

9.1. Size:1205K lonten
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf pdf_icon

LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge... See More ⇒

Detailed specifications: LND20N60, LND20N65, LND2N60, LND2N65, LND4N60, LND4N65, LND4N80, LND5N50, AO3400A, LND7N60, LND7N60D, LND7N65D, LNDN10N65, LNDN12N65, LNE06R062, LNE06R079, LNE06R110