LNDN12N65 PDF and Equivalents Search

 

LNDN12N65 Specs and Replacement

Type Designator: LNDN12N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.8 nS

Cossⓘ - Output Capacitance: 164 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220F

LNDN12N65 substitution

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LNDN12N65 datasheet

 ..1. Size:1285K  lonten
 lnd12n65 lnc12n65 lne12n65 lnf12n65 lndn12n65.pdf pdf_icon

LNDN12N65

LND12N65/LNC12N65/LNE12N65/LNF12N65/LNDN12N65 Lonten N-channel 650V, 12A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 12A D resulting device has low conduction resistance, R 0.8 DS(on),max superior switching performance and high avalanche Q 41.9 nC g,typ energy. Features Low R DS(on) ... See More ⇒

 9.1. Size:1293K  lonten
 lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf pdf_icon

LNDN12N65

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 10A D resulting device has low conduction resistance, R 1.0 DS(on),max superior switching performance and high avalanche Q 34.2 nC g,typ energy. Features Low R DS(on) ... See More ⇒

Detailed specifications: LND4N65, LND4N80, LND5N50, LND5N65B, LND7N60, LND7N60D, LND7N65D, LNDN10N65, IRFZ48N, LNE06R062, LNE06R079, LNE06R110, LNE06R140, LNE07R085H, LNE08R055W3, LNE08R085, LNE08R160

Keywords - LNDN12N65 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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