All MOSFET. LNDN12N65 Datasheet

 

LNDN12N65 Datasheet and Replacement


   Type Designator: LNDN12N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 41.9 nC
   tr ⓘ - Rise Time: 37.8 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220F
 

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LNDN12N65 Datasheet (PDF)

 ..1. Size:1285K  lonten
 lnd12n65 lnc12n65 lne12n65 lnf12n65 lndn12n65.pdf pdf_icon

LNDN12N65

LND12N65/LNC12N65/LNE12N65/LNF12N65/LNDN12N65Lonten N-channel 650V, 12A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 12ADresulting device has low conduction resistance, R 0.8DS(on),maxsuperior switching performance and high avalanche Q 41.9 nCg,typenergy.Features Low RDS(on)

 9.1. Size:1293K  lonten
 lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf pdf_icon

LNDN12N65

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65Lonten N-channel 650V, 10A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 10ADresulting device has low conduction resistance, R 1.0DS(on),maxsuperior switching performance and high avalanche Q 34.2 nCg,typenergy.Features Low RDS(on)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF130SMD05DSG

Keywords - LNDN12N65 MOSFET datasheet

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